Nonlinear model of quasi-stationary process in crystalline semiconductor

Nonlinear Multigrid Applied to a One-Dimensional Stationary Semiconductor Model

The nonlinear multigrid method is applied to a transistor problem in one dimension. A weak spot in the linearization of the well-known ScharfetterGummel discretization scheme is reported. Further it is shown that both the residual transfer and the solution transfer from a ne to a coarse grid need special requirements due to the rapidly varying problem coe cients. Some modi cations are proposed ...

Quasi-stationary simulation of the contact process

We review a recently devised Monte Carlo simulation method for the direct study of quasi-stationary properties of stochastic processes with an absorbing state. The method is used to determine the static correlation function and the interparticle gap-length distribution in the critical one-dimensional contact process. We also find evidence for power-law decay of the interparticle distance distri...

Quasi-Stationary Simulation: the Subcritical Contact Process

We apply the recently devised quasi-stationary simulation method to study the lifetime and order parameter of the contact process in the subcritical phase. This phase is not accessible to other methods because virtually all realizations of the process fall into the absorbing state before the quasi-stationary regime is attained. With relatively modest simulations, the method yields an estimate o...

Nonlinear interval model control of quasi-keyhole arc welding process

This paper addresses the development of a nonlinear model based interval model control system for the quasi-keyhole arc welding process, a novel arc welding process which has advantages over the laser welding process and conventional arc welding processes. The structure of the nonlinear model chosen was proposed based on an analysis of the quasi-keyhole process to be controlled. Because of the ...

Stationary Distribution of a Perturbed Quasi-birth-and-death Process